 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Advanced Process Technology Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRFZ46NSPBF IRFZ46NLPbF HEXFET(R) Power MOSFET D PD - 95158 VDSS = 55V RDS(on) = 0.0165 G Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for lowprofile applications. ID = 53A S D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 53 37 180 3.8 107 0.71 20 28 11 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. --- --- Max. 1.4 40 Units C/W www.irf.com 1 04/22/04 IRFZ46NS/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss EAS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 --- --- 2.0 19 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID =1mA .0165 VGS =10V, ID = 28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 72 ID = 28A 11 nC VDS = 44V 26 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 28A ns --- RG = 12 --- RD = 0.98, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 1696 --- VGS = 0V 407 --- pF VDS = 25V 110 --- = 1.0MHz, See Fig. 5 583 152 IAS = 28A, L = 389mH Typ. --- 0.057 --- --- --- --- --- --- --- --- --- --- 14 76 52 57 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 53 showing the A G integral reverse --- --- 180 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 28A, VGS = 0V --- 67 101 ns TJ = 25C, IF = 28A --- 208 312 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by Starting TJ = 25C, L = 389H TJ 175C. RG = 25, IAS = 28A. (See Figure 12) max. junction temperature. ( See fig. 11 ) Pulse width 400s; duty cycle 2%. Uses IRFZ46N data and test conditions. This is a typical value at device destruction and represents operation outside rated limits. ISD 28A, di/dt 220A/s, VDD V(BR)DSS, This is a calculated value limited to TJ = 175C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A. ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ46NS/LPbF 1000 TO P VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 I , D rain-to-S ou rc e C urre nt (A ) D BO TTOM I , D rain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 100 10 10 4.5 V 4.5 V 1 0.1 1 2 0 s P U L S E W ID T H TJ 25 C T C = 25C 10 100 A 1 0.1 1 2 0 s P U L S E W ID T H TJ 17 5C T C = 175C 10 100 A V D S , D rain-to-S ource V oltage (V ) V DS , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D = 4 6A I D , D rain-to-So urce C urren t (A ) 2.0 100 TJ = 2 5C TJ = 1 7 5C 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 2 5V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ46NS/LPbF 2800 2400 C , Capacitance (pF) 2000 C iss 1600 C oss 1200 V G S , G ate-to-S ource V oltage (V ) V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 20 I D = 28 A V D S = 44 V V D S = 28 V 16 12 8 800 C rss 400 4 0 1 10 100 A 0 0 10 20 30 FO R TE S T C IR C U IT S E E FIG U R E 1 3 40 50 60 A V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I SD , Reverse D rain C urrent (A) O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) I D , D rain Current (A ) 100 100 10s T J = 1 75 C T J = 25 C 10 100s 10 1m s 1 0.4 0.8 1.2 1.6 V G S = 0V 2.0 A 2.4 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 10m s 100 A V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFZ46NS/LPbF 60 50 Limited By Package VDS VGS RG RD D.U.T. VDD + ID , Drain Current (A) 40 30 10V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 10% VGS td(on) tr t d(off) tf VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ46NS/LPbF 500 E A S , S ingle Pulse Avalanc he E nergy (m J) VDS L D.U.T. TOP 400 B O TT O M ID 11 A 2 0A 28 A RG + V - DD 300 10 V IAS tp 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 100 0 V D D = 25 V 25 50 75 100 125 150 175 A S tarting T J , J unc tion T em perature (C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ46NS/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ46NS/LPbF D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H I S IS AN IR F 5 30 S WIT H L OT COD E 8 02 4 AS S E MB L E D ON WW 02 , 20 00 IN T H E AS S E MB L Y L IN E "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT IONAL R E CT I F IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S D AT E CODE YE AR 0 = 20 00 WE E K 0 2 L IN E L OR INT E R NAT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S DAT E COD E P = DE S IGNAT E S L E AD -F R E E P R ODU CT (OP T IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E COD E 8 www.irf.com IRFZ46NS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMP L E : T H IS IS AN IR L 3103L L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C OR IN T E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OP T IONAL ) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com 9 IRFZ46NS/LPbF D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) F E E D D IR E C T IO N 1 .8 5 ( .0 7 3 ) 1 .6 5 ( .0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 ( .6 3 4 ) 1 5 .9 0 ( .6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F E E D D IR E C T IO N 1 3 .5 0 ( .5 3 2 ) 1 2 .8 0 ( .5 0 4 ) 2 7 .4 0 ( 1 .0 7 9 ) 2 3 .9 0 ( .9 4 1 ) 4 3 3 0 .0 0 ( 1 4 .1 7 3 ) M AX. 6 0 .0 0 (2 .3 6 2 ) M IN . NO TES : 1 . C O M F O R M S T O EIA-4 1 8 . 2 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T ER . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 3 0 .4 0 (1 .1 9 7 ) M AX. 2 6 .4 0 ( 1 .0 3 9 ) 2 4 .4 0 ( .9 6 1 ) 3 4 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 4/04 10 www.irf.com |
Price & Availability of IRFZ46NSPBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |